Samsung K4J52324QC 512Mbit GDDR3 BGA SDRAM
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The K4J52324QC is 536,870,912 bits of hyper synchronous data rate Dynamic RAM organized as 8 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 6.4GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of operating frequencies, and programmable latencies allow the device to be useful for a variety of high performance memory system applications.
Manufacturer Part # | K4J52324QC |
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Manufacturer | Samsung |
Item Condition | New |